Temperature dependence of carrier generation, and transport in p a r a-terphenyl above and below the 180 °K phase transition

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Abstract
Charge carrier drift mobilities have been measured in para‐terphenyl single crystals by the transient photoconductivity method. In the a, b, and c′ crystal directions, room temperature electron mobilities were 0.34, 1.2, and 0.25 cm2 V−1 sec−1, respectively, and 0.80 cm2 ⋅V−1 sec−1 in the c′ direction for holes. Electron mobilities in the a, b direction followed a T−0.5 and T−0.7 dependence but for temperatures below the 180 °K phase transition, a T−2.5 dependence is followed. No discontinuity in the carrier mobility temperature dependence were observed. Hole photocurrents in all crystal directions could be measured at low temperatures. Possible mechanisms of carrier transport and carrier generation are discussed.

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