Spontaneous generation of dislocations during growth of silicon single crystals
- 1 August 1968
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 2 (4) , 248-250
- https://doi.org/10.1016/0022-0248(68)90009-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Dislocations in Silicon Single CrystalsJapanese Journal of Applied Physics, 1962
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959
- Production of Dislocations in Germanium by Thermal ShockJournal of Applied Physics, 1958
- Production of Dislocations During Growth from the MeltJournal of Applied Physics, 1958
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956