Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators
- 17 April 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (8) , 160-161
- https://doi.org/10.1049/el:19690119
Abstract
Relaxation oscillations have been observed in field-ionised epitaxial nGaAs samples on a semi-insulating substrate. The decay times of excess electrons and light output are reduced by a transverse magnetic field, indicating the presence of free holes driven towards the surface or the interface by the Suhl effect.Keywords
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