Modeling of laser planarization of thin metal films
- 20 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (12) , 1109-1111
- https://doi.org/10.1063/1.100772
Abstract
The differences between excimer (≊30 ns pulse duration) and flashlamp‐pumped dye (≊500 ns pulse duration) laser planarization are examined for 1.5–2 μm thick gold films over SiO2 layers. Test structures containing bar patterns (square waves) of 5000 Å peak‐to‐trough amplitude with spatial periods ranging from 10 to 100 μm were prepared and laser irradiated. A linear model is presented which described the time evolution of the film’s surface topography when melted with a dye laser pulse. Excimer laser planarization is found to be susceptible to evaporative recoil effects which may cause undesired pattern amplification.Keywords
This publication has 2 references indexed in Scilit:
- High-aspect-ratio via-hole filling with aluminum melting by excimer laser irradiation for multilevel interconnectionIEEE Electron Device Letters, 1987
- Planarization of gold and aluminum thin films using a pulsed laserIEEE Electron Device Letters, 1986