Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD technique
- 5 July 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (14) , 1082-1083
- https://doi.org/10.1049/el:19900701
Abstract
Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films.Keywords
This publication has 0 references indexed in Scilit: