Atom and carrier depth distributions for 300 kev arsenic channeled in the ⟨110⟩ of silicon as a function of alignment angle and ion fluence
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 57 (4) , 109-113
- https://doi.org/10.1080/01422448008226510
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Planar and axial channeling of 800-keV As in 〈110〉 siliconApplied Physics Letters, 1976
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972