On the stability of organic field-effect transistor materials
- 17 December 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (25) , 4163-4164
- https://doi.org/10.1063/1.1421230
Abstract
Stability and degradation of transistor performance of devices based on pentacene and α-sexithiophene are investigated. In order to distinguish between effects at grain boundaries and material issues, macroscopic bicrystals were used, where transistors were prepared on a single grain as well as across a single grain boundary. The main reason for performance instabilities is the formation of oxygen-related trapping states at the grain boundary upon exposure to air. However, especially in the case of pentacene, stable hole transport properties are observed.Keywords
This publication has 16 references indexed in Scilit:
- Large-scale complementary integrated circuits based on organic transistorsNature, 2000
- Charge trapping instabilities of sexithiophene Thin Film TransistorsSynthetic Metals, 1999
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Physical vapor growth of centimeter-sized crystals of α-hexathiopheneJournal of Crystal Growth, 1997
- Electrical conductivity and oxygen doping of vapour-deposited oligothiophene filmsSynthetic Metals, 1996
- All-organic field-effect transistors made of π-conjugated oligomers and polymeric insulatorsSynthetic Metals, 1993
- Instability in electrical performance of organic semiconductor devicesAdvanced Materials for Optics and Electronics, 1992
- Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)Journal of Physics D: Applied Physics, 1991
- Melt processable polymer electronicsSynthetic Metals, 1991
- Determination of the density of states of a-Si:H using the field effectJournal of Non-Crystalline Solids, 1980