Defects in Microcrystalline Silicon Prepared With Hot Wire CVD
- 1 January 2002
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapour Deposition for Thin Film Solar Cell ApplicationsJapanese Journal of Applied Physics, 2002
- Preparation Temperature Effects in Microcrystalline Silicon Thin Film Solar CellsMRS Proceedings, 2001
- Microcrystalline Silicon Thin-Film Solar Cells Prepared at Low TemperatureMRS Proceedings, 2001
- Thin film Si solar cell fabricated at low temperatureJournal of Non-Crystalline Solids, 2000
- Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurementsJournal of Non-Crystalline Solids, 2000
- Microscopic structure of defects in microcrystalline siliconJournal of Non-Crystalline Solids, 2000
- Microcrystalline silicon and micromorph tandem solar cellsApplied Physics A, 1999
- Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) MethodJapanese Journal of Applied Physics, 1998
- Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growthPhilosophical Magazine A, 1998
- Growth and Structure of Microcrystalline Silicon Prepared with Glow Discharge at Various Plasma Excitation FrequenciesMRS Proceedings, 1996