Bilayer resist used in e-beam lithography for deep narrow structures
- 31 May 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 46 (1-4) , 369-373
- https://doi.org/10.1016/s0167-9317(99)00107-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Lithographic performance of 193 nm single and bi-layer materials.Journal of Photopolymer Science and Technology, 1998
- ECR Plasma Etching with Heavy Halogen IonsJapanese Journal of Applied Physics, 1990