A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films

1 July 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (7) , 915-916
https://doi.org/10.1109/PROC.1972.8807

Abstract

The fabrication and characteristics of bipolar transistors in thin silicon films formed on insulating substrates by an electrochemical etching process are described, and a new technique for achieving complete dielectric isolation of integrated circuits is discussed.

Keywords

BIPOLAR INTEGRATED CIRCUITS
SILICON
DIELECTRIC THIN FILMS
SEMICONDUCTOR FILMS
ETCHING
DIELECTRIC SUBSTRATES
BIPOLAR TRANSISTORS
FABRICATION
DIELECTRICS AND ELECTRICAL INSULATION
MOSFETS