Analytical Model to Determine the Gate Leakage Current in In0.52Al0.48As/InxGa1-xAs Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4R)
- https://doi.org/10.1143/jjap.33.1735
Abstract
The gate leakage current of pulse doped In0.52Al0.48As/In x Ga1- x As pseudomorphic modulation doped field-effect transistors (MODFETs) is analysed by thermionic field emission theory. For the first time, a theoretically based investigation of the leakage current for this type of device is carried out. The influence of parameters of the layer structure design on the gate leakage current such as the thickness of the barrier layer or the doping concentration in the supply layer is predicted. The model adequately predicts the experimental decrease in leakage current with increased thickness of the barrier layer and reduced doping concentration.Keywords
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