Current state and future challenge in Molecular Beam Epitaxy (MBE) research
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 1-10
- https://doi.org/10.1016/0022-0248(89)90339-4
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μmApplied Physics Letters, 1988
- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- A new infrared detector using electron emission from multiple quantum wellsJournal of Vacuum Science & Technology B, 1983
- Compositional and doping superlattices in III-V semiconductorsAdvances in Physics, 1983
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970