Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodes

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Abstract
Heterojunction Schottky barrier diodes, in which a pseudomorphic layer of n+‐InGaAs played the role of a metal contacting n‐GaAs, were grown by molecular beam epitaxy. The junctions had low barrier heights (30–150 meV) which could be controlled by composition and doping of the n+ layer. I‐V measurements of the devices confirmed that the devices behaved as Schottky diodes, in accordance with the theory of tunneling and thermally assisted tunneling in the temperature range 4–200 K. An exponential increase in conductance with decreasing In concentration indicates a decrease in barrier height which is at least qualitatively consistent with simulations of the barriers based on earlier experiments, which showed that the band‐gap discontinuity appears predominately in the conduction band.