Effects of dry etching on GaAs

• 1 October 1983
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 1  (4) , 1334-1337
• https://doi.org/10.1116/1.582741

Abstract

Keywords

• GALLIUM ARSENIDE
• RADIATION DAMAGE
• REACTIVE ION ETCHING
• BREAKDOWN VOLTAGE
• ARSENIC
• SCHOTTKY BARRIER
• SCHOTTKY DIODE
• INTEGRATED CIRCUIT
• CHARGED PARTICLES
• QUANTUM MECHANICS
• ION BEAM