Dynamics of pulsed CO2laser annealing of silicon
- 14 May 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (5) , L67-L72
- https://doi.org/10.1088/0022-3727/14/5/002
Abstract
Presents a detailed calculation using the method of finite differences to study the dynamics of pulsed CO2 laser annealing of ion-implanted Si. The calculations are based on a thermal melting model, taking into account the temperature dependences of all pertinent material parameters, including the absorption coefficient. The authors investigate the 'thermal runaway' behaviour and calculate the threshold power density to cause thermal runaway and surface melting of Si during CO2 laser annealing.Keywords
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