Observation of surface evaporation of Hg from HgTe crystals by means of energetic oxygen ion backscattering

Abstract
Dissociation of Hg from the near‐surface region of HgTe crystals was observed, up to 10 μm, by means of 42‐MeV O5+ backscattering. Samples were annealed in vacuum at various temperatures up to 280 °C. The change of the backscattering spectra with annealing time and temperature indicated that the Hg atoms evaporated almost completely from the near‐surface region to a depth d(t,T) and that only Te atoms remained there. The interface between the Te region and the HgTe crystal migrated at a velocity u(T) which was determined as u(T)=1.2×105 exp(−1.2 eV/kT) cm/sec. This is accounted for by a simple phenomenological model which suggests that the migration of the Hg atoms across the interface is the rate controlling process for the whole boundary migration process.

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