High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

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Abstract
The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.