Characterization of electron cyclotron resonance process plasma and film deposition
- 1 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 139, 294-301
- https://doi.org/10.1016/0921-5093(91)90632-w
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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- Anisotropy of low-energy ion etching via electron cyclotron resonance plasmaJournal of Vacuum Science & Technology B, 1988
- Characteristics of Hydrogenated Amorphous Silicon Films Prepared by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition Method and Their Application to PhotodiodesJapanese Journal of Applied Physics, 1987
- Bonding in hydrogenated hard carbon studied by optical spectroscopySolid State Communications, 1983