Lasing threshold in quantum well surface-emitting lasers: Many-body effects and temperature dependence
- 25 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26) , 2698-2700
- https://doi.org/10.1063/1.101928
Abstract
The geometry of quantum well surface‐emitting lasers has several important consequences. The ultrashort (∼1 μm) vertical cavity defines longitudinal modes with energy separation greater than the bandwidth of spectral gain. The optical confinement of these modes can approach unity. To achieve lasing, high carrier densities (∼1012 cm−2) in the quantum well are required. The confined carriers interact through enhanced many‐body exchange which influences both the lasing wavelength and threshold characteristics. Indeed, the exchange interaction can facilitate the lasing process. We theoretically and experimentally study the role of the short cavity and exchange interaction on the cw lasing threshold as a function of temperature. In constrast to edge emitters, the lasing threshold in these surface emitters exhibits a well‐defined minimum at a particular temperature. The temperature of the minimum can be designed by merely changing the active layer thickness.Keywords
This publication has 16 references indexed in Scilit:
- High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasersApplied Physics Letters, 1989
- High-efficiency, continuous-wave, epitaxial surface-emitting laser with pseudomorphic InGaAs quantum wellsApplied Physics Letters, 1989
- Exchange interactions in quantum well subbandsApplied Physics Letters, 1988
- Novel wavelength-resonant optoelectronic structure and its application to surface-emitting semiconductor lasersElectronics Letters, 1988
- Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAsPhysical Review Letters, 1987
- Exchange and correlation potential for a two-dimensional electron gas at finite temperaturesPhysical Review A, 1986
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Many-body effects in the absorption, gain, and luminescence spectra of semiconductor quantum-well structuresPhysical Review B, 1986
- Excitons and electron-hole plasma in quasi-two-dimensional systemsJournal of Luminescence, 1985
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW HeterostructuresJapanese Journal of Applied Physics, 1984