Abstract
The charge control concept of transistor operation is extended to include delay effects in an accurate, yet tractable, way. Defining the transit time τtas the ratio of the excess base charge to the collector current, the transform of the transit time τt(s) is approximated by\tau_{t}(1 + S\tau_{D}), where τDis the delay time. For a one-dimensional, homogeneous-base transistor,\tau_{D} = \tau_{t}/6. The results of this technique are in good agreement with exact calculations.

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