Theoretical analysis of band structures and lasing characteristics in strained quantum wire lasers
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 2109-2116
- https://doi.org/10.1109/3.234476
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Tight-binding analysis of energy-band structures in quantum wiresPhysical Review B, 1991
- Linewidth enhancement factor in strained quantum well lasersIEEE Photonics Technology Letters, 1989
- Extremely wide modulation bandwidth in a low threshold current strained quantum well laserApplied Physics Letters, 1988
- Optical investigation of highly strained InGaAs-GaAs multiple quantum wellsJournal of Applied Physics, 1987
- Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyApplied Physics Letters, 1986
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- HgTe-CdTe superlattice subband dispersionPhysical Review B, 1986
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Computing eigenvalues of very large symmetric matrices—An implementation of a Lanczos algorithm with no reorthogonalizationJournal of Computational Physics, 1981
- Deformation potentials of the direct and indirect absorption edges of GaPPhysical Review B, 1979