Photoluminescence study of hydrogen passivation in GaAs and AlGaAs by the photochemical vapor deposition system
- 2 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (1) , 70-72
- https://doi.org/10.1063/1.103581
Abstract
It is shown for the first time that hydrogen passivation can be made by using a photochemical vapor deposition system. Unlike the common methods, this new method of hydrogenation has no electron or ion bombardment, thus the sample surface will not be damaged during processing. The effects of hydrogenation are confirmed by the enhancement of photoluminescence intensity. A strong increase in the luminescence intensity (a factor of 23) has been observed which is comparable to the results of rf glow discharge systems.Keywords
This publication has 7 references indexed in Scilit:
- Comparative photoluminescence study of hydrogenation of GaAs, AlxGa1−xAs, and AlAsApplied Physics Letters, 1989
- Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with siliconJournal of Applied Physics, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Photoluminescence of AlxGa1-xAs near the Γ-X crossoverSemiconductor Science and Technology, 1987
- Si donor neutralization in high-purity GaAsApplied Physics Letters, 1987
- Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1986
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986