Heavy oxynitridation technology for forming highly reliable flash-type EEPROM tunnel oxide films

10 September 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (19) , 1781-1783
https://doi.org/10.1049/el:19921136

Abstract

For the first time, it is demonstrated that in flash-type EEPROMs, the endurance properties are dramatically improved by heavy oxynitridation (RTONO) of the tunnel oxide. The layer composition evaluted by SIMS measurement indicates that large amounts of N atoms (>10²⁰ atom/cm³) pile up at the SiO₂/Si interface, and are distributed in the bulk SiO₂. In addition, the RTONO film reduces the number of hydrogen atoms, which are the origin of electron traps. This oxynitridation causes a decrease of both electron and hole traps in the tunnel oxide, resulting in an improvement of the threshold voltage narrowing.

Keywords

RTP
THRESHOLD VOLTAGE NARROWING
EEPROM
SIMS MEASUREMENT
ELECTRON TRAPS
HOLE TRAPS
FLASH-TYPE
SIO2-SI3N4-SIO2
SIO2-SI INTERFACE
OXYNITRIDATION TECHNOLOGY
ENDURANCE PROPERTIES
RTONO FILM
MEMORY DEVICES
LAYER COMPOSITION
TUNNEL OXIDE FILMS
RAPID THERMAL ONO FILM

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