Electroreflectance Studies in CuGaS2

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Abstract
Room temperature electroreflectance (ER) measurements have been performed near the fundamental absorption edge of CuGaS2 single crystals grown by both iodine-transport and melt-growth methods. Transition energies and broadness of the ER spectra are examined and the results are discussed in terms of photoluminescence properties. The band gap energy obtained from the ER spectrum is 2.492 eV at 290 K, and the value is larger than the widely used band gap energy of 2.43 eV determined by the previous ER studies.