Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
- 8 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (10) , 1403-1405
- https://doi.org/10.1063/1.119906
Abstract
In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of at 10.3 μm at 78 K.
Keywords
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