Simulations of deep level related lock-on conductivityin SiC diodessubject to ultrafast, high voltage reverse biasing pulses
- 4 December 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (25) , 2162-2163
- https://doi.org/10.1049/el:19971462
Abstract
Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that ‘deep-defects’ can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.Keywords
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