Tailoring the birefringence in a vertical-cavity semiconductor laser
- 9 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (24) , 3635-3637
- https://doi.org/10.1063/1.117007
Abstract
We demonstrate a technique to modify the strain in a planar vertical-cavity semiconductor laser. The technique consists of locally melting a hole in the wafer next to the device by means of a focused laser beam. This allows manipulating both the magnitude and the orientation of the native birefringence in a permanent way.Keywords
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