Degradation mechanism of m.o.s. structures and transistors under ionising radiation

2 April 1970

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 6 (7) , 198-200
https://doi.org/10.1049/el:19700142

Abstract

The physical nature of the emission-current mechanism involved at each heterojunction when m.o.s. components are irradiated is discussed by the authors. They test the validity of this mechanism with an overall experiment, and analyse its practical consequences on the form of the ΔV_G(V_G) degradation curve.

Keywords

STRUCTURES
M.O.S
HETEROJUNCTION
CURVE
ΔVG
IONISING RADIATION
TRANSISTORS UNDER IONISING

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