High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition
- 20 March 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (12) , 121102
- https://doi.org/10.1063/1.2188056
Abstract
A mid-wavelength infrared photodetector based on quantum dots buried in an matrix and deposited on a substrate was demonstrated. Its photoresponse at was measured to be around with a cutoff at . Due to the high peak responsivity of and low dark-current noise of the device, a specific peak detectivity of was achieved at bias.
Keywords
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