Computer Simulation Study on Atmospheric Pressure CVD Process for Amorphous Silicon Carbide

Publisher Website
Google Scholar
Abstract
Mathematical modeling and simulation study of horizontal chemical vapor deposition reactor in the APCVD process for were carried out for the prediction of film growth rate and uniformity and for the investigation of the effects of reactant flow and other operating conditions. In order to solve two‐dimensional momentum, energy, and material balance equations, finite volume numerical analysis was used. Experimental data were obtained in an atmospheric reactor for the reaction of and in to produce amorphous film on silicon wafer at 650°–850°C. Kinetic rate expression obtained from the regression of the experimental deposition rate data was used for the simulation of large scale production of thin films. At a high reaction rate, low flow rate or large temperature gradients increase film nonuniformity and at a low total pressure uniform film growth was assured. Our computation simulation model also considers the changes in the transport rate coefficients such as viscosity, thermal conductivity, and diffusivity with the changes in temperature, pressure, and the composition of reactant gases inside reactor.

This publication has 0 references indexed in Scilit: