Electrical resistance of diamond implanted at liquid nitrogen temperature with carbon ions
- 1 January 1983
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 76 (3) , 79-82
- https://doi.org/10.1080/01422448308209641
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Bipolar transistor action in ion implanted diamondApplied Physics Letters, 1982
- A percolation theory approach to the implantation induced diamond to amorphous-carbon transitionRadiation Effects, 1980
- Hard conducting implanted diamond layersApplied Physics Letters, 1977
- Hopping conductivity in C-implanted amorphous diamond, or how to ruin a perfectly good diamondSolid State Communications, 1976
- On structural transitions in ion-implanted diamondRadiation Effects, 1974