Boundary element method for calculation of depletion layer profiles
- 15 March 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (6) , 229-230
- https://doi.org/10.1049/el:19840154
Abstract
A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.Keywords
This publication has 1 reference indexed in Scilit:
- Integral Equation Methods in Potential Theory and ElastostaticsJournal of Applied Mechanics, 1978