Germanium Nanowire Epitaxy: Shape and Orientation Control
Top Cited Papers
- 21 January 2006
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (2) , 318-323
- https://doi.org/10.1021/nl052231f
Abstract
Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.Keywords
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