Structural perfection of the GeSi and SiGe heteroepitaxial systems
- 1 July 1974
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 22 (3) , 221-229
- https://doi.org/10.1016/0040-6090(74)90293-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Crystalline structure of germanium films on silicon substratesThin Solid Films, 1971
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Vapor Growth of Germanium-Silicon Alloy Films on Germanium SubstratesJournal of the Electrochemical Society, 1963
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956