A design method for variable-capacitance diodes with an m-th power characteristic for a wide voltage range
- 1 December 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (12) , 988-991
- https://doi.org/10.1109/t-ed.1966.15881
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Silicon alloy-diffused variable capacitance diodeSolid-State Electronics, 1963
- Alloy-diffused variable capacitance diode with large figure-of-meritIRE Transactions on Electron Devices, 1961
- Alloyed, Thin-Base Diode Capacitors for Parametric AmplificationJournal of Applied Physics, 1959
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942