Thermoelectric power of the extrinsic Mott semiconductor

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Abstract
The thermoelectric power for the non-half-filled band Mott semiconductor is calculated for the single-band Hubbard model both in the absence and presence of coupling of the electrons to the vibrational degrees of freedom of the sites. The results for the very-near-half-filled band are studied in detail and compared with results for a conventional semiconductor. The thermoelectric power changes sign as a function of temperature. The quarter-filled-band case is also discussed.