Pseudopotential Calculation of the Band Structure of CdIn2S4

The band structure of the spinal-type semiconductor Cd${\mathrm{In}}_2$ ${\mathrm{S}}_4$ has been calculated by the empirical-pseudopotential method. The form factors have been determined to agree with the values previously chosen by Cohen and Bergstresser for semiconductors with diamond and zinc-blende structures. Because of the large number of atoms per unit cell, a simplified model of the actual crystal structure has been developed, thus obtaining a feasible way to get meaningful results and to make direct comparisons with the band structures of many well-known elementary and binary semiconductors. The band structure obtained with the use of our model, and the results of the full calculations made for symmetry points, are discussed and compared with the available experimental information.