High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

9 April 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (8) , 803-804
https://doi.org/10.1049/el:19920506

Abstract

Device results from laser diodes with a new current blocking scheme using low temperature (LT) GaAs grown by MBE at 200°C are reported. The laser structure is grown by metal organic vapour phase epitaxy on channelled MBE-grown LT-GaAs. The LT-GaAs is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-AlGaAs strained quantum well lasers. The CW laser threshold is 50 mA at RT (with a lasing wavelength of 980 nm) and far field patterns show fundamental modes (both lateral and transverse modes) even at an output power of 55 mW (per facet, uncoated). FWHMs of far field patterns parallel and perpendicular to the junction plane are 16 an d 39° at an output power of 55 mW, respectively.

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