Rapid Thermal Annealing Behavior of Amorphous SiC Layers Deposited by Electron Cyclotron Resonance Plasma

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Abstract
The archival version of this work was published in Journal of the electrochemical society 143.1 (1996): 271-277Hydrogenated amorphous silicon carbide, a‐SiC:H, has been deposited by electron cyclotron resonance plasmas. Operating in methane excess (Formula flow ratios between 2 and 4) and at high enough microwave powers, the deposited SiC films are close to stoichiometric. In these SiC layers, only small traces of the Formula and Formula stretching bands can be detected. Rapid thermal annealing leads to nearly complete dehydrogenation of the SiC layers deposited under these conditions as deduced from ellipsometric and infrared spectroscopy

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