Deposition rates and efficiencies for the chemical vapor deposition (CVD) of from , , and were experimentally determined as a function of CVD variables. These results, coupled with previously determined thermodynamic equilibrium compositions and deposit morphologies, were used to develop models for the deposition process. At high temperatures the principal rate‐limiting mechanism is the diffusion of gaseous species through a gas boundary layer above the deposition surface. However, low or high fractions in the reactant gas cause a chemical kinetic mechanism to become rate limiting. At lower deposition temperatures equilibrium no longer appears to exist at the substrate surface and a chemical kinetic rate‐limiting mechanism becomes important. A simple linear rate expression was used to calculate an activation energy of for the chemical kinetic mechanism.