Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S)
- https://doi.org/10.1143/jjap.35.1276
Abstract
We have studied impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP, induced by three different dielectric cap films, namely, SiO2, SiNx and SrF2. The difference in photoluminescence characteristics of these materials after heat treatment has been discussed. Furthermore, the in-plane spatial resolution of the disordering process has been investigated for the first time.Keywords
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