Estimation of temperature limit for negative differential resistance using resonant tunnelling
- 1 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (5) , 342-343
- https://doi.org/10.1049/el:19900224
Abstract
The temperature limit of negative differential resistance devices using resonant tunnelling in double-barrier heterostructures is derived as a function of structural parameters. The validity of the estimation is supported by computer simulation and experimental investigations on temperature dependencies of current/voltage characteristics by changing the barrier thickness.Keywords
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