Epitaxial Growth of Indium Phosphide in an Open Flow System
- 1 April 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (4) , 500B
- https://doi.org/10.1143/jjap.8.500b
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Preparation and Properties of Epitaxial Gallium PhosphideJournal of the Electrochemical Society, 1967
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964
- Preparation and Some Characteristics of Single-Crystal Indium PhosphideJournal of the Electrochemical Society, 1958
- Electron Mobility in InPJournal of the Electrochemical Society, 1958