Onset of heavy inversion in MOS devices doped nonuniformly near the surface

1 March 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (3) , 288-289
https://doi.org/10.1109/t-ed.1977.18728

Abstract

A general definition for the onset of heavy inversion at the semiconductor surface is derived, which includes the effect of nonuniform impurity concentration near the surface caused, for instance, by thermal oxidation.

Keywords

FREQUENCY
OXIDATION
POTENTIAL WELL
ELECTRON DEVICES