Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxy
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 192-196
- https://doi.org/10.1016/0039-6028(90)90289-k
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- InAs monomolecular plane in GaAs grown by flow-rate modulation epitaxyJournal of Applied Physics, 1989
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1989
- Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1988
- Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow-rate modulation epitaxyApplied Physics Letters, 1987
- Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric fieldSurface Science, 1986