Spatial distribution of defects in high-purity silica glasses

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Abstract
The spatial distribution of defects and impurities in a variety of high-purity silica glass manufactured by different methods are studied. The defects investigated include those found in the as-manufactured glass (oxygen vacancy and peroxy linkage), as well as those induced by ionizing radiation or ultraviolet light (E′ center and oxygen hole centers). A significant difference is observed in the distribution between silica manufactured by different methods. Furthermore, the defects induced by ionizing radiation or ultraviolet light have a spatial distribution relative to the geometry of the as-manufactured boule, suggesting that these defects arise primarily from the activation of preexisting precursors.