Structure and properties of silicon dioxide thermal films I. SiO2 films of up to 50 nm thickness
- 16 November 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 86 (1) , 93-100
- https://doi.org/10.1002/pssa.2210860108
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Fixed Charge Density ( Q ss ) at the Si ‐ SiO2 Interface for Thin OxidesJournal of the Electrochemical Society, 1982
- Chemical bond and related properties of SiO2. IV. Structure of amorphous SiO2Physica Status Solidi (a), 1978
- Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 SystemJournal of the Electrochemical Society, 1978
- Stress and Thermal-Expansion Coefficient of Chemical-Vapor-Deposited Glass FilmsJournal of Applied Physics, 1970
- Ordered Structure and Ion Migration in Silicon Dioxide FilmsJapanese Journal of Applied Physics, 1968