High-carrier-density electron dynamics in low-temperature-grown GaAs
- 16 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (24) , 3245-3247
- https://doi.org/10.1063/1.119138
Abstract
Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 °C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes.Keywords
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