Electron traps in bulk and epitaxial GaAs crystals
- 31 March 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (7) , 191-193
- https://doi.org/10.1049/el:19770140
Abstract
Fifteen different electron traps have been characterised in v.p.e., l.p.e., m.b.e. and bulk-grown GaAs from d.l.t.s. experiments. An accurate description of each level is given, and allows a fruitful comparison with fragmentary previous data. A catalogue of these electron traps is provided as a working tool.Keywords
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