In Situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine

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Abstract
The low pressure chemical vapor deposition (LPCVD) of in situ doped silicon from disilane and phosphine was investigated using response surface methodology experimental design. TEM and associated analytical techniques were employed in characterizing films deposited over the range of 475°–700°C. Polycrystalline films with a resistivity of ∼770 μΩ‐cm after a 850°C, 30 min anneal with less than 5% thickness variation were deposited at approximately 60 Å‐min−1 over 100 mm wafers.